| 1. | High surface hole concentration p - type gan using mg implantation
应用mg离子注入获得高表面空穴载流子浓度p -型gan |
| 2. | Study the effect of composition variation within the constituent oxides in the high - tc superconductors to the structure , tc and hole concentration
研究高温超导体中各种氧化物间组成变化对结构、超导温度和电洞浓度的影响。 |
| 3. | Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。 |
| 4. | Mg ions were implanted on mg - doped gan grown by metalorganic chemical vapor deposition . the p - type gan was achieved with high hole concentration 8 . 2810
应用mg离子注入mocvd法生长掺杂mg的gan中，在经过800 , 1h的退火后，获得高空穴载流子浓度8 . 2810 |
| 5. | Conformed by van der pauw hall measurement after annealing at 800 for 1h . this is the first experimental report of mg implantation on mg - doped gan and achieving p - type gan with high surface hole concentration
的p -型gan 。首次报道了实验上通过mg离子注入到mg生长掺杂的gan中并获得高的表面空穴载流子浓度。 |
| 6. | The sheet resistivity dramatically decreases to 106 ? / ? . the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too . te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
，面载流子浓度增大到109 / cm2的数量级，迁移率亦增大到104cm2 / v . s ，掺杂te元素改善了cdte薄膜的电学性质，使其变为良好的p型半导体。 |
| 7. | Pure cdte films have high electrical resistivity and are slightly p - type , due to the formation of cd vacancies in the cdte lattice acting as acceptor centers . the sheet resistivity of films are about 1010 ? / ? . the sheet hole concentration is 105 - 6 / cm2 and the hall mobility is about hundreds cm2 / v . s . the structural and electrical properties of cdte films doped te are markedly different from pure cdte films
，面载流子浓度约105 - 6 / cm2 ，载流子迁移率为几百cm2 / v . s ；掺杂te元素后，薄膜衍射峰强增大，薄膜结构上出现了第二种相成分?六方结构的te ，由衍射峰强判断该相比例较小，同时cdte薄膜的衍射峰向低角度偏移，晶格< wp = 5 >常数增大。 |
